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DIM600BSS12-E000
DIM600BSS12-E000
Single Switch IGBT Module
Replaces issue September 2003, version PDS5651-2.0 PDS5702-1.2 January 2004
FEATURES
I I I I
Trench Gate Field Stop Technology Low Conduction Losses Low Switching Losses 10s Short Circuit Withstand
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1200V 1.7V 600A 1200A
APPLICATIONS
I I I
Motor Drives Wind Turbines UPS Systems
2(E) 5(E1) 3(G1) 1(C) 4(C1)
The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM600BSS12-E000 is a single switch 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10s short circuit withstand. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
Fig. 1 Single switch circuit diagram
ORDERING INFORMATION
Order As: DIM600BSS12-E000 Note: When ordering, please use the complete part number.
Outline type code: B (See package details for further information) Fig. 2 Module Outline
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600BSS12-E000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax I2t Visol QPD Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I2t value Isolation voltage - per module Partial discharge - per module Tcase = 80C 1ms, Tcase = 110C Tcase = 25C, Tj = 150C VR = 0, tp = 10ms, Tvj = 125C Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287. V1 = 1300V, V2 = 1000V, 50Hz RMS VGE = 0V Test Conditions Max. 1200 20 600 1200 2.75 45 2.5 10 Units V V A A kW kA2s kV pC
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600BSS12-E000
THERMAL AND MECHANICAL RATINGS
Internal insulation: Baseplate material: Creepage distance: Symbol Rth(j-c) Al2O3 Cu 20mm Clearance: 11mm CTI (Critical Tracking Index): 425
Parameter Thermal resistance - transistor
Test Conditions Continuous dissipation junction to case
Min. -
Typ. -
Max. 45
Units C/kW
Rth(j-c)
Thermal resistance - diode
Continuous dissipation junction to case
-
-
80
C/kW
Rth(c-h)
Thermal resistance - case to heatsink (per module)
Mounting torque 5Nm (with mounting grease) Transistor Diode
-
-
15
C/kW
Tj
Junction temperature
-40 3 2.5 1.1
-
150 125 125 5 5 2
C C C Nm Nm Nm
Tstg -
Storage temperature range Screw torque Mounting - M6
Electrical connections - M6 Electrical connections - M6
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600BSS12-E000
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125C IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = 20V, VCE = 0V IC = 24mA, VGE = VCE VGE = 15V, IC = 600A VGE = 15V, IC = 600A, , Tcase = 125C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage DC tp = 1ms IF = 600A IF = 600A, Tcase = 125C Cies LM RINT SCData Input capacitance Module inductance - per arm Internal transistor resistance Short circuit. ISC VCE = 25V, VGE = 0V, f = 1MHz Tj = 125C, VCC = 900V, tp 10s, VCE(max) = VCES - L*. di/dt IEC 60747-9 Note: * L is the circuit inductance + LM I1 I2 Min. 5.0 Typ. 5.8 1.7 2.0 1.65 1.65 42 20 0.23 2400 Max. 1 5 2 6.5 2.15 2.5 600 1200 2.15 2.15 Units mA mA A V V V A A V V nF nH m A A
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600BSS12-E000
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qg Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Gate charge Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 600A, VR = 600V, dIF/dt = 4800A/s Test Conditions IC = 600A VGE = 15V VCE = 600V RG(ON) = 3.6 RG(OFF) = 1.8 L ~ 70nH Min. Typ. 550 100 62 200 120 60 6 45 360 18 Max. Units ns ns mJ ns ns mJ C C A mJ
Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse current Diode reverse recovery energy Test Conditions IC = 600A VGE = 15V VCE = 600V RG(ON) = 3.6 RG(OFF) = 1.8 L ~ 70nH IF = 600A, VR = 600V, dIF/dt = 4400A/s Min. Typ. 700 150 95 250 120 80 90 440 36 Max. Units ns ns mJ ns ns mJ C A mJ
Note: Switching Characteristic measurements taken using standard driver circuit conditions.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600BSS12-E000
TYPICAL CHARACTERISTICS
1200 Common emitter 1100 Tcase = 25C 1000 900
Collector current, IC - (A)
1200 1100 1000 900 Common emitter Tcase = 125C
Collector current, IC - (A)
VGE = 10V VGE = 12V VGE = 15V VGE = 20V 0.5 1.0 1.5 2.0 2.5 3.0 Collector voltage, Vce - (V) 3.5 4.0
800 700 600 500 400 300 200 100 0 0.0
800 700 600 500 400 300 200 100 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Collector voltage, Vce - (V) 4.0 4.5 5.0 VGE = 10V VGE = 12V VGE = 15V VGE = 20V
Fig. 3 Typical output characteristics
210 300
Fig. 4 Typical output characteristics
Conditions: Tcase = 125C Rg(on) = 3.6 ohms 180 Rg(off) = 1.2 ohms Vcc = 600V 150
Switching energy, Esw - (mJ)
Conditions: Tcase = 125C 270 IC = 600A Vcc = 600V 240
Eon Eoff Erec
Switching energy, Esw - (mJ)
210 180 150 120 90 60
120 Eon 90 Eoff Erec 60
30 30 0 0 300 600 900 Collector current, IC - (A) 1200 0 5 10 Gate resistance, Rg - (ohms) 15
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600BSS12-E000
1200 Tj = 125C Tj = 25C 1000
1400
1200
1000
Forward current, IF - (A)
800
Collector current, IC - (A)
800
600
600
400
400 Tcase = 125C Vge = 15V 200 R = 1.2 Ohms g Module IC Chip IC 200 400 600 800 1000 1200 Collector emitter voltage, Vce - (V) 1400
200
0 0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Forward voltage, VF - (V)
0 0
Fig. 7 Diode typical forward characteristics
700 Tj = 125C 600 1000
Fig. 8 IGBT reverse bias safe operating area
IGBT Diode
500
Transient thermal impedance, Zth(j-c) - (C/kW)
Reverse recovery current, Irr - (A)
100
400
300
10
200
100
IGBT Diode
0 0
200
400 600 800 1000 Reverse voltage, VR - (V)
1200
1400
1 0.001
Ri (C/KW) i (ms) Ri (C/KW) i (ms) 0.01
1 0.6626 0.0366 1.6697 0.0518 0.1 Time - (s)
2 5.7405 1.2397 13.4278 1.6595
3 23.0059 38.1633 47.4367 37.3209 1
4 15.5853 118.8096 17.2352 170.5037 10
Fig. 9 Diode reverse bias safe operating area
Fig. 10 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM600BSS12-E000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
2(E) 5(E1) 3(G1)
1(C) 4(C1)
Nominal weight: 475g Module outline type code: B
Fig. 11 Package details
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France: Tel: +33 (0)2 47 55 75 53. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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